Multilayer accept rice material manufactures 2 dimension semiconductor successful

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American chemist research and development gave a kind of new method, preparation of use silicon telluride goes out have multilayer 2 dimension semiconductor of the structure accept rice material, these material are had different figure and range way, can be in many domains distinguish oneself. The scientist of the university uses Braun silicon telluride is made gave accept rice belt and accept rice board. Silicon telluride is a kind of pure P semiconductor (carry) of positive electrical charge, appear extensively in a lot of electrons and optical equipment, their layer level structure can absorb lithium and magnesium, this means the electrode that can use production cell. Christie Kesiji of professor of assistant of university Chemstry Department expresses the leader of this research, Braun, silicon radical compound is the cornerstone of process of contemporary electricity processing, silicon telluride is among them, what we invent is brand-new the method is usable will make have multilayer material of rice of 2 dimension accept. Ke Siji group passes method of gas phase deposit to was in charge of the synthesis in type furnace to give these new material in. When silicon and telluride are heated in pipe, can evaporate and react, make compound of the body before giving a kind, compound of the body before this is planted is by argon gas deposit then on base, subsequently, silicon telluride grows from inside compound of the body before this come out. Pass the processing that change the temperature of forge and undertakes differring to base, researcher is made finally gave accept rice belt and accept rice board, the width that accept rice takes is about 50 to 1000 accept rice, length is 10 micron. And, different material has different structure, its crystal lattice also has different permutation means, because this has different attribute and use. Researcher also proves, can use different base, will different material is impure (in impure process, petty impurity is introduced inside material, the electricity property that changes material thereby) enter these accept rice data inside. In newest research, researcher passes an experiment to confirm, grow on sapphirine base when silicon telluride when, but to adulterate among them aluminous, this one process can turn material into N semiconductor from P semiconductor (carry) of negative electric charge. Researcher still points out, the data that new method gets is stabilized not only, and be improved easily. They plan the electricity of pair of gotten accept rice data and optical attribute to have a test. CNC Milling